| PART |
Description |
Maker |
| ATC100A0R7BT ATC100A220JT ATC100A0R2BT ATC100A150J |
380W GaN WIDEBAND PULSED
|
RF Micro Devices
|
| MAGX-000035-015000-V1 MAGX-000035-015000-15 |
GaN on SiC HEMT Pulsed Power Transistor
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solution...
M/A-COM Technology Solu...
|
| RFHA1021U |
60W GaN Wide-Band Pulsed Power Amplifier
|
RF Micro Devices
|
| NPA1006 |
GaN Wideband Power Amplifier, 28 V, 12.5 W
|
M/A-COM Technology Solu...
|
| ECE-V1HA101UP EEV-TG2A101M ERJ-8GEYJ100V GRM32NR72 |
30W GaN WIDEBAND POWER AMPLIFIER
|
RF Micro Devices
|
| MAGX-000912-250L00 MAGX-000912-SB1PPR |
GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 960-1215 MHz, 128μs Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
|
| FX5545G0182V7T2E2 FX5545G0182V1B5E2 |
Low Profile 3mm DC/DC Buck Converter 0.8V to 4.5V, 3A with 380W/in3 Power Density Efficiency up to 95% 扁平3mm的DC / DC降压转换器为0.8V.5V，功率密度与380W/in3效率高达95A
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
|
| MAGX-011086-SMBPPR |
GaN Wideband Transistor 28 V, 4 W
|
M/A-COM Technology Solu...
|
| TAN350 |
350 Watts, 50 Volts, Pulsed Avionics 960 1215 MHz 350瓦，50伏特，脉冲航空电601215兆赫
TACAN 960-1215 MHz, Class C, Common Base, Pulsed; P(out) (W): 350; P(in) (W): 70; Gain (dB): 7; Vcc (V): 50; Pulse Width (µsec): 10; Duty Cycle (%): 10; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR
350 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz
|
Electronic Theatre Controls, Inc.
Microsemi, Corp.
ETC[ETC]
List of Unclassifed Manufacturers
|
| PHL2143 PH1214-3L |
Radar Pulsed Power Transistor3W
Radar Pulsed Power Transistor/ 3W/ 2ms Pulse/ 20% Duty 1.2 - 1.4 GHz
Radar Pulsed Power Transistor, 3W, 2ms Pulse, 20% Duty 1.2 - 1.4 GHz 雷达脉冲功率晶体管的3W毫秒脉冲0％的责任1日至1号吉
|
Tyco Electronics
Velleman, Inc.
|
